Silicon Photodiode
The S6204-03 silicon photodiode has been designed for near-infrared operation and is optimized for applications such as spectrophotometry, general purpose optical measurement, and environmental sensors that measure oxides of nitrogen. Along with having an internal cooling and preamp for low-level light detection, this photodiode has a sppectral response from 320 to 1100 nm. The thermoelectric internal cooling eliminates the need for external cooling and enhances stability and noise performance. With a feedback resistance of 10 gigaohms, this unit is housed in a 1 in. diameter package with a plastic lens, and is powered by both 5 V as well as ±15 VDC. It has a photosensitivty of –6.5 V/nW, noise equivalent power of 2 fW/Hz1/2, and cutoff frequency of 130 Hz.
Hamamatsu Corp., 360 Foothill Rd., P.O. Box 6910 Bridgewater, NJ 08807 Phone: (201) 231-0960 Fax: (201) 231-1218